Doktorsritgerð - Doctoral thesis -
Greinar birtar í ISI tímaritum - Articles in ISI-journals -
Greinar í ritrýndum fræðiritum - Articles in other peer-reviewed journals -
Greinar birtar í óritrýndum tímariti - Articles in other journals -
Greinar í ritrýndum ráðstefnuritum - Conference proceedings - -
Bókarkaflar - Articles in other conf. proceedings -
Útdrættir - printed abstracts
| A 1.2 Doktorsritgerð | ||
| Doctoral thesis |
Photoluminescence Studies of Deep Level Impurities in Gallium
Phosphide and Gallium Nitride.
Doctoral Dissertation, Lund (1981).
O. Lagerstedt, B. Monemar, and
H.P. Gislason,
Properties of GaN tunneling light emitting diodes. J.
Appl. Phys. 49 (1978).
B. Monemar, L. Samuelson, O.
Lagerstedt, H.P. Gislason, and P.O. Holtz,
Temperature dependence of
optical properties of deep impurity levels in semiconductors studied
by photoluminescence. J. Luminescence 18/19 (1979).
B. Monemar, O. Lagerstedt, and
H.P. Gislason,
Properties of Zn-doped
VPE grown GaN: I. Luminescence
data in relation to doping conditions. J. Appl. Phys. 51, 625
(1980).
B. Monemar, H.P. Gislason, and O.
Lagerstedt,
Properties of Zn-doped VPE-grown GaN. II. Optical cross
sections. J. Appl. Phys. 51, 640 (1980).
P.J. Dean, B. Monemar, H.P.
Gislason, and D.C. Herbert, The COL spectrum in GaP. J. Luminescence
24/25, 401 (1981).
B. Monemar, H.P. Gislason, P.J.
Dean, and D.C. Herbert,
Optical properties of the Characteristic
Orange Luminescence center in GaP. Phys. Rev. B25, 7719 (1982).
H.P. Gislason, B. Monemar, P.O.
Holtz, P.J. Dean, and D.C. Herbert,
Thermal behaviour of the
Cu-related 2. 177 eV bound exciton in GaP. J. Phys. C15, 5467
(1982).
H.P. Gislason, B. Monemar, P.J.
Dean, D.C. Herbert, S. Depinna, B.C. Cavenett, and N. Killoran,
Photoluminescence studies of the 1.911 eV Cu-related complex in GaP.
Phys. Rev. B26, 827 (1982).
H.P. Gislason, B. Monemar, P.J.
Dean, and D.C. Herbert,
Crystal field splitting of excitons bound to
neutral complexes of GaP. Physica 117 & 118B, 269 (1983).
B. Monemar, P.O. Holtz, H.P.
Gislason, N. Magnea, Ch. Uihlein and P.L. Liu,
Radiative
recombination of bound excitons with site transfer final state
excitations in Cu-doped ZnTe.
J. Luminescence 31 & 32, 476
(1984).
H.P. Gislason, B. Monemar, M.E.
Pistol, P.J. Dean, D.C. Herbert, A. Kana'ah, and B. C.Cavenett,
Neutral (Cu-Li) complexes in GaP: The (Cu-Li)I bound exciton at
2.306 eV. Phys. Rev. B31, 3774 (1985).
Z.G. Wang, H.P. Gislason, and B.
Monemar,
Acceptor associates and bound excitons in GaAs:Cu. J. Appl.
Phys. 58, 230 (1985).
H.P. Gislason, Z.G. Wang, and B.
Monemar,
Evidence for complex acceptors related to Cu and Li in
GaAs. J. Appl. Phys. 58, 240 (1985).
B. Monemar, H.P. Gislason, and
Z.G. Wang,
Localization of excitons to Cu-related defects in GaAs.
Phys. Rev. B31, 7919 (1985).
H.P. Gislason, B. Monemar, M.E.
Pistol, P.J. Dean, D.C. Herbert, S. Depinna, A.Kana'ah, and B.C.
Cavenett,
Neutral (Cu-Li) complexes in GaP: The (Cu-Li)-III bound
exciton at 2.242 eV. Phys. Rev. B32, 3958 (1985).
B. Monemar, P.O. Holtz, H.P.
Gislason, N. Magnea, Ch. Uihlein, and P.L. Liu,
Optical properties
of defects created by Ag diffusion in ZnTe. Phys. Rev. B32, 3244,
(1985).
P.O. Holtz, B. Monemar, H.P.
Gislason, Ch. Uihlein, and P.L. Liu,
Novel recombination mechanism
for interacting bound exciton complexes in Cu-doped ZnTe. Phys. Rev.
B32, 3730 (1985).
H.P. Gislason, B. Monemar, Z.G.
Wang, Ch. Uihlein, and P.L. Liu,
Direct evidence for the
acceptorlike character of the Cu-related C and F bound-exciton
centres in GaAs. Phys. Rev. B32, 3723 (1985).
M. Godlewski, W.M. Chen, M.E.
Pistol, B. Monemar, and H.P. Gislason,
Investigation of a deep
Li-related complex in GaP by optically detected magnetic resonance.
Phys. Rev. B32, 6650 (1985).
H.P. Gislason, F. Rong, and G.D.
Watkins,
Optically detected magnetic resonance of a localized spin
triplet midgap center in GaAs, Phys. Rev. B32, 6945 (1985).
H.P. Gislason, M.E. Pistol, B.
Monemar, A. Kana'ah, and B.C. Cavenett,
Neutral Cu-Li complexes in
GaP. The (Cu-Li)V bound exciton at 2.172 eV. Phys. Rev. B33, 1233
(1986).
H.P. Gislason, and G.D. Watkins,
ODMR investigation of nonradiative recombination via the AsGa
antisite in Gallium Arsenide. Phys. Rev. B33, 2957 (1986).
B. Monemar, H.P. Gislason, W.M.
Chen, and Z.G. Wang,
Electronic properties of an electron attractive
complex defect in GaAs:Cu, Zn. Phys. Rev. B33, 4424 (1986).
A. Kana'ah, B.C. Cavenett, H.P.
Gislason, B. Monemar and M.E. Pistol,
An ODMR investigation of the
(Cu-Li)I and (Cu-Li)III complex defects in GaP. J. Phys. C19, 1239
(1986).
B. Monemar, P.O. Holtz, H.P.
Gislason, and N. Magnea, Complex defects in ZnTe created by Cu
diffusion. J. Luminescence 34, 245 (1986).
B. Monemar, P.O. Holtz, W.M. Chen,
H.P. Gislason, U. Lindefelt and M.E. Pistol,
Optical properties and
excitation-induced distortion of a trigonal Cu-related neutral
complex bound exciton at 2.26 eV in ZnTe. Phys. Rev. B34, 8656
(1986).
D. Jeon, H.P. Gislason, and G.D.
Watkins,
ODMR-MCD study of the Zinc vacancy and related complexes in
ZnSe. Materials Science Forum 10-12, 851 (1986)
A. Kana'ah, B.C. Cavenett, B.
Monemar, and H.P. Gislason,
An ODMR study of close DA pair
luminescence involving Cu and Li complexes in GaP. Semiconductor
Science and Technology 2, 151 (1987).
A. Kana'ah, B.C. Cavenett, H.P.
Gislason, and B. Monemar,
Optical properties of deep (Cu-Li)-related
neutral complexes in GaP. Semiconductor Science and Technology 2,
299 (1987).
W.M. Chen, B. Monemar, P.O. Holtz,
X.Q. Zhao, and H.P. Gislason, Electronic properties of a complex
Cu-related acceptor with a bound exciton at 2.3423 eV in ZnTe. Phys.
Rev. B 35, 5714 (1987).
W.M. Chen, X.Q. Zhao, B. Monemar,
H.P. Gislason, and P.O. Holtz,
Electronic structure of a hole-attractive
neutral Cu-related complex-defect bound exciton at 2.345 eV in ZnTe.
Phys. Rev. B 35, 5722 (1987).
D.Y. Jeon, H.P. Gislason, J.F.
Donegan and G.D. Watkins,
Identification of the PIn antisite in InP
by ODENDOR. Phys. Rev. B36, 1324 (1987).
B. Monemar, W.M. Chen, P.O. Holtz
and H.P. Gislason,
Electronic structure of the 2.3149-eV complex
defect in Ag-doped ZnTe. Phys. Rev. B36, 4831 (1987).
W.M. Chen, H.P. Gislason and B.
Monemar,
A PGa antisite related neutral complex defect in GaP,
studied with optically detected magnetic resonance. Phys. Rev. B36,
5058 (1987).
W.M. Chen, B. Monemar, H.P.
Gislason, M. Godlewski, and M.E. Pistol,
Optically detected magnetic
resonance studies of the 1.911 eV Cu-related complex in GaP. Phys.
Rev. B37, 2558 (1988).
H.P. Gislason, B. Monemar, P.
Bergman, and M.E. Pistol,
Optical properties of a neutral Cu-C
complex defect in GaP. Phys. Rev. B38, 5466 (1988).
H.P. Gislason,
Triplet bound
excitons in copper-doped Gallium Phosphide. Applied Physics A48, 11
(1989).
K. Ando, A. Katsui, D.Y. Jeon,
G.D. Watkins and H.P. Gislason,
Characterization of an anion antisite
defect as a deep double donor in InP. Materials Science Forum 38 761
(1989)
H.P. Gislason, D. Jeon, K. Ando
and G.D. Watkins,
Magnetic circular dichroism studies of
electron-irradiation induced defects in InP. Materials Science Forum
38 1145 (1989)
H.P. Gislason, F. Rong, and G.D.
Watkins,
Different configurations of the PIn antisite in n- and
p-type InP. Acta Physica Polonica A77, 51 (1990)
H. P. Gíslason,
Optical
Detection of Magnetic Resonance in Semiconductors: Anion Antisites
in Indium Phosphide. Applied Magnetic Resonance 2, 329-348 (1991).
H.P. Gislason, H. Sun, R.E. Peale,
and G.D. Watkins,
Generation of anion-antisite defects in n-type,
p-type and semi-insulating InP studed by ODMR and ODENDOR. Materials
Science Forum 83-87, 905 (1992).
H.P. Gislason, Baohua Yang, I.S.
Hauksson, J.T. Gudmundsson, M. Linnarsson, and E. Janzén,
Electrical and optical properties of GaAs doped with Li. Materials
Science Forum 83-87, 985 (1992).
H.P. Gislason, B.H. Yang and M.
Linnarsson.
Shifting photoluminescence bands in
high-resistivity-Li-compensated GaAs. Phys. Rev. B47, 9418 (1993).
H.P. Gislason, B.H. Yang, J.
Pétursson and M. Linnarsson. Radiative recombination in
n-type and p-type GaAs compensated with Li. J. Appl. Phys.47, 7275
(1993).
B.H. Yang, H.P. Gislason, and M.
Linnarsson. Lithium passivation of Zn- and Cd acceptors in p-type
GaAs. Phys. Rev. B48, 12345 (1993).
H.J. Sun, H.P. Gíslason, F.
Rong, and G.D. Watkins.
Different PIn antisites in n- and p-type
InP. Phys. Rev. B48, 17092 (1993).
D.Y. Jeon, H.P. Gislason and G.D.
Watkins,
Optical Detection of Magnetic Resonance of the Zinc Vacancy
in ZnSe via Magnetic Circular Dichroism, Phys Rev. B48, 7872 (1993).
B.H. Yang, T. Egilsson, S.
Kristjánsson, J. Pétursson, and H.P. Gislason.
Characterization of Defects in Li-diffused n-type GaAs. Materials
Science Forum 143-147, 839 (1994).
E.Ö. Sveinbjörnsson, S.
Kristjánsson, and H.P. Gislason,
Lithium-gold related defect
complexes in n-type silicon. Physica Scripta T54, 12, (1994).
T. Egilsson, B.H. Yang, and H.P.
Gislason,
Passivation of shallow and deep levels by lithium in GaAs.
Physica Scripta T54, 28, (1994).
T. Egilsson, H.P. Gislason, and
B.H. Yang,
Passivation of copper by lithium in p-type GaAs. Phys.
Rev. B50, 1996 (1994)
E.Ö. Sveinbjörnsson, S.
Kristjánsson, and H.P. Gislason,
Lithium-gold related defect
complexes in n-type crystalline silicon. J. Appl. Phys. 77, 3146
(1995)
H.P. Gislason, T. Egilsson, K.
Leosson, and B.H. Yang,
Lithium passivation and electric field
assisted reactivation of acceptors in GaAs. Phys. Rev. B 51, 9677
(1995)
H.P. Gislason and B.H. Yang,
Bound
exciton spectra in semi-insulating GaAs, Materials Science Forum
196-201, 201-206 (1995).
H.P. Gislason, S. Kristjánsson
and E.Ö. Sveinbjörnsson,
Lithium-gold-related
photoluminescence in n-type silicon, Materials Science Forum
196-201, 695-700 (1995).
K. Leosson and H.P. Gislason,
Reactivation kinetics of lithium-acceptor pairs in GaAs, Materials
Science Forum 196-201, 1395-1400 (1995).
S.Þ. Ingvarsson and H.P.
Gislason,
Time of flight in lithium compensated GaAs, Materials
Science Forum 196-201, 1655-1660 (1995).
B.H. Yang and H.P. Gislason,
Electronic properties of GaAs doped with copper, Materials Science
Forum 196-201, 713-718 (1995).
J. Pétursson, S.Þ.
Ingvarsson, B.H. Yang and H.P. Gislason,
Oscillations in PLE spectra
of Li-passivated GaAs related to interstitial Li donors, Materials
Science Forum 196-201, 207-212 (1995).
Hafliði P. Gislason,
Passivation of impurities in semiconductors by hydrogen and light
metal ions, Physica Scripta T69, 40 (1997).
K. Leosson and H.P. Gislason,
Thermal and electrical behaviour of Cu-related acceptors in Li-a nd
H-passivated GaAs, Physica Scripta T69, 196 (1997).
K. Leosson and H.P. Gislason,
Diffusivity and defect reactions of lithium in GaAs, Phys. Rev.
B56,9506-9511 (1997
D. Seghier and H.P, Gislason,
Effect of the interface on the electrical properties of ZnSe/GaAs
heterojunctions grown by molecular beam epitaxy, Applied Physics
Letters 71, 1-3 (1997)
K. Leosson and H.P. Gislason,
Low temperature intrinsic diffusion coefficient of lithium in GaAs,
Materials Science Forum 258-263, 1827-1832 (1997).
H.P. Gislason, K. Leosson, H.
Svavarsson, K. Saarinen, and A. Mari,
Lithium diffused vacancy
formation and its effect on the diffusivity of lithium in gallium
arsenide, Materials Science Forum 258-263, 1813-1820 (1997).
D. Seghier and H.P. Gislason,
Effects of copper diffusion on the native defect EL2 in GaAs,
Materials Science Forum 258-263, 1003-1007 (1997).
D. Seghier, I.S. Hauksson, H.P.
Gislason, K.A. Prior, and B.C. Cavenett,
Interface defects and their
effect on the electrical properties of ZnSe/GaAs heterojunctions
grown by MBE, Materials Science Forum 258-263, 1383-1388 (1997).
I.S. Hauksson, D. Seghier, H.P.
Gislason, K.A. Prior, and B.C. Cavenett,
Study of hole traps in ZnSe
and ZnSSe epilayers by DLTS and admittance spectroscopy, Materials
Science Forum 258-263, 1671-1676 (1997).
D. Seghier, I.S. Hauksson, H.P.
Gislason, G.D. Brownlie, K.A. Prior, and B.C. Cavenett,
Electrical
characterization of hole traps in p-type ZnSe and ZnSSe grown by
molecular beam epitaxy. Applied Physics Letters 72, 3026-3028 (1998)
I.S. Hauksson, D. Seghier, H.P.
Gislason, G.D. Brownlie, K.A. Prior, and B.C. Cavenett,
DLTS and
drift mobility measurements on MBE-grown nitrogen-doped ZnSe,
Journal of Crystal Growth, 184-185 (1-4), 490-494 (1998).
D. Seghier, I.S. Hauksson, H.P.
Gislason, K.A. Prior, and B.C. Cavenett,
Evidence of strong effect
from the interface on the electrical characteristics of ZnSe/GaAs
heterostructures, J. Appl. Phys. 85, 3721 (1999).
D. Seghier and H.P. Gislason,
Observation of persistent photoconductivity in N-doped p-type
ZnSe/GaAs heterojunctions, J. Phys. D: Appl. Phys. 32, 369-373
(1999).
D. Seghier and H.P. Gislason,
Electrical characterization of Mg-related energy levels and the
compensation mechanism in GaN:Mg. Physica B 273-274 (1999) 46-49
D. Seghier and H.P. Gislason,
The role of deep levels in the persistent photoconductivity in Mg-doped GaN
grown by MOCVD. Physica B 273-274 (1999) 63-65
J.T. Gudmundsson,
H.G. Svavarsson and H.P. Gislason,
Lithium-gold related complexes in p-type crystalline silicon.
Physica B 273-274 (1999) 379-382
H.Ö. Ólafsson, J.T. Gudmundsson, H.G. Svavarsson,
and H.P. Gislason,
Hydrogen passivation of AlxGa1-xAs/GaAs
studied by surface photovoltage
spectroscopy. Physica B 273-274 (1999) 689-692
S. Arpiainen,
K. Saarinen, J.T. Gudmundsson, and H.P. Gislason,
Effect of lithium diffusion on the native defects in GaAs studied by
positron annihilation spectroscopy. Physica B 273-274 (1999) 701-704
D. Seghier, J.T. Gudmundsson
and H.P. Gislason,
Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe
grown by MBE. Physica B 273-274 (1999) 891-894
D. Seghier and H.P. Gislason,
Investigation of persistent photoconductivity in nitrogen-doped ZnSe/GaAs
heterojunctions grown by MBE, J. Crystal Growth 214/215 (2000) 511-515
C. Morhain, B. Vögele,
J.S. Milnes, K.A. Prior, B.C.
Cavenett, D. Seghier, and H.P. Gislason,
Properties of the nitrogen
acceptor in Zn1-xMgxSe
alloys with different Mg content,
J. Crystal Growth 214/215 (2000) 482-486
D. Seghier,
J.T. Gudmundsson and H.P. Gislason,
Direct observation of hydrogen passivation of nitrogen-related
energy levels in ZnSe and
ZnSxSe1-x grown by MBE,
J. Crystal Growth 214/215 (2000) 478-481
D. Seghier and H.P. Gislason,
On Mg-related energy levels and compensation mechanism in GaN:Mg grown by
metalorganic chemical vapor deposition, J. Appl. Phys. 88 (2000) 6483-6487
D. Seghier and H.P. Gislason,
Electrically active defects in AlGaN alloys grown by metalorganic chemical
vapor deposition. Physica B 308-310 (2001) 130-133
H.G. Svavarsson, J.T. Gudmundsson, G.I. Gudjonsson,
and H.P. Gislason,
The effect of Si site-switching in GaAs on electrical properties and
potential fluctuation. Physica B 308-310 (2001) 804-807
D. Seghier, H.P. Gislason,
C. Morhain, M. Teisseire, E. Tournie, G. Neu,
and J-P Faurie,
Self-compensation of the phosphorus acceptetor in ZnSe,
physica status solidi (b) No. 1. 251-255 (2002)
G. Reynaldsson, S. Olafsson,
H.P. Gislason, G. Song, and H. Sabel,
Hydrogen interactions in ultra-thin two-dimensional vanadium layers.
Journal of Magnetism and Magnetic Materials 240 (2002) 478-480
H.G. Svavarsson, J.T. Gudmundsson,
G.I. Gudjonsson, and H.P. Gislason,
Potential fluctuations and site switching in Si-doped GaAs studied
by photoluminescence. Physica Scripta T101, 114-118 (2002)
D. Seghier and H.P. Gislason,
Dependence of the Au/Al/GaN Schottky characterisation on Al content.
Physica Scripta T101, 230-233 (2002)
D. Seghier and H.P. Gislason,
Correlation between deep levels and the persistent photoconductivity in
Mg-doped GaN grown by MOCVD.
J. Phys. D: Appl. Phys. 35 (2002) 1-4
S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen,
L. Liszkay, D. Seghier, and H.P. Gislason,
Vacancy Defects as Compensating Centers
in Mg-doped GaN.
Phys. Rev. Letters 90, 137402 (2003)
H.G. Svavarsson, J.T. Gudmundsson, and H.P. Gislason,
Impurity band in lithium-diffused and annealed GaAs:
Conductivity and Hall effect measurements.
Phys. Rev. B 67, 205213 (2003)
J.T. Gudmundsson, H.G. Svavarsson, S. Gudjonsson, and H.P. Gislason,
Frequency-dependent conductivity in lithium-diffused and
annealed GaAs.
Physica B 340-342 (2003) 324-328
D. Seghier and H.P. Gislason,
Noise spectroscopy of metastable deep level defects in
Mg-doped GaN.
Physica B 340-342 (2003) 381-384
D. Seghier and H.P. Gislason,
Effect of hydrogenation on the electrical properties of
n-type AlGaN.
J. Phys. D: Appl. Phys. 36 (2003) 1-3.
G. Reynaldsson, S. Olafsson, and H.P. Gislason,
The influence on thermodynamical properties of hydrogen in
(001) oriented Mo/V superlattices.
Journal of Alloys and Compounds 356-357
(2003) 545-548
G. Reynaldsson, S. Ólafsson, H.P. Gislason, G. Song, and
H. Zabel,
Hydrogen-induced lattice expansion in 8/4 u.c.
Mo/V superlattice.
Journal of Alloys and Compounds 356-357 (2003) 549-552
H.G. Svavarsson, J.T. Gudmundsson, and H.P. Gislason,
Lithium-diffused
annealed GaAs: An admittance-spectroscopy study.
Phys. Rev. B 69, 155209 (2004)
D. Seghier and H.P. Gislason,
Noise and its correlation to deep defects in Mg-doped GaN.
Phys. D: Appl. Phys. 38 (2005) 843-846
S. Hautakangas, V. Ranki, A. Makkonen, M.J. Puska,
K. Saarinen, L. Liszkay, D. Seghier, and H.P. Gislason,
J. Freitas, R.L. Henry, X. Xu, and D.C. Look,
Gallium and nitrogen vacancies in GaN: impurity
decoration effects.
Proc. XXIII-th International Conference on Defects
in Semiconductors, Osaka 2005.
H.P. Gislason and D. Seghier
Investigation of defects using generation-recombination noise.
Optica Applicata, vol XXXVI, No. 2-3 (2006) 359-371.
| A 3.2 Greinar birtar í öðrum ritrýndum fræðiritum - |
|
| Articles in other peer-reviewed journals |
| A 3.4 Greinar birtar í óritrýndum tímariti - | |
| Articles in other journals |
Hafliði P. Gíslason,
Eiga rannsóknir í eðlisfræði
hálfleiðara erindi til Íslands? Fréttabréf
Eðlisfræðifélags Íslands, Ritstj.
Þorsteinn I. Sigfússon, Nr. 11. apríl 1987, bls.
3-14.
Hafliði P. Gíslason,
Við upphaf nýrra
rannsókna á Íslandi. í Grunnrannsóknum
á Íslandi, Ritstjóri Ólafur Halldórsson,
(1988) bls. 37-46.
Hafliði P. Gíslason,
Nóbelsverðlaunin í eðlisfræði 1989
Fréttabréf Háskóla Íslands 9.
tbl. 1989, bls. 13 - 15.
Brynjólfur Þórsson og Hafliði P. Gíslason,
Tölvustýringar og
gagnasöfnun við rannsóknir í eðlisfræði
þéttefnis. Raflost 1989 bls 38.
Kristján Leósson og Hafliði P. Gíslason,
Hálfleiðarar
í hátækniiðnaði, Raflost 1997, bls.
7-10.
Hafliði Pétur Gíslason,
Hundrað ára
rafeind. Í afmælisriti Davíðs Oddsonar,
ritstj. Hannes H. Gissurarson, Jón Steinar Gunnlaugsson og
Þórarinn Eldjárn, Reykjavík 1998. bls.
399-413.
Hafliði P. Gíslason,
Rafeindir a timamotum, Raflost 1999, bls. 38-42.
Hafliði P. Gíslason,
Eðlisfræði og hátækni, Raflost 2000, 38-41
Hafliði Pétur Gíslason og Halldór G. Svavarsson,
Nýjar hugmyndir um gerð GaAs tvista, Raflost 2002, bls. 9-10
Jón Tómas Guðmundsson, Sveinn Ólafsson og Hafliði Pétur Gíslason,
Ræktun með sameindaúðun, Raflost 25 (2003) 22-24
| A 4.1 Greinar í ritrýndum ráðstefnuritum - | |
| Articles in peer-reviewed conference proceedings |
H.P. Gislason, B. Monemar, M.E.
Pistol, D.C. Herbert, A. Kana'ah and B.C. Cavenett,
Electronic
structure and phonon interaction of neutral Cu-Li centres in GaP, in
Proceedings of the 17th International Conference on the Physics of
Semiconductors, edited by J.D. Chadi and W. A. Harrison (Springer,
New York, 1985) p. 635.
B. Monemar, P.O. Holtz, H.P.
Gislason, N. Magnea, Ch. Uihlein, and P.L. Liu,
Bound excton
recombination in highly Zn-doped ZnTe, in Proceedings of the 17th
International Conference on the Physics of Semiconductors, edited by
J.D. Chadi and W.A. Harrison (Springer, New York, 1985) p. 675
H.P. Gislason, B. Monemar, and
Z.G. Wang,
Acceptor-like complexes of Cu and Cu-Li in GaAs, in
Proceedings of the 13th International Conference on Defects in
Semiconductors, Coronado, 1984, edited by L.C. Kimerling and J.M.
Parsey Jr., (AIME, New York 1985) p. 1013.
H.P. Gislason, and G.D. Watkins,
Optically detected magnetic resonance of copper doped Gallium
Phosphide, in Microscopic Identification of Electronic Defects in
Semiconductors, Ed. by N.M. Johnson, S.G. Bishop and G.D. Watkins,
(MRS, Pittsburg 1985) p. 425.
B. Monemar, U. Lindefelt, W.M.
Chen, H.P. Gislason, P.O. Holtz and M.E. Pistol.
Magnetic properties
of neutral complex defects in semiconductors. Proc. 18th Int. Conf.
on the Physics of Semiconductors, ed. by. O. Engström (1986) p.
939.
W.M. Chen, M. Godlewski, B.
Monemar and H.P. Gislason,
PGa - antisite complexes in GaP studied
with optical detection of magnetic resonance,in Gallium Arsenide and
Related Compounds 1987, ed. by. A. Christou and H.S. Ruppert, (IOP
Publishing Ltd, Bristol, 1988) p. 77.
B. Monemar, Q.X. Zhao, H.P.
Gislason, W.M. Chen, P.O. Holtz and M. Ahlström.
Characterization of a neutral AsGa-CuGa pair defect in GaAs, in
Gallium Arsenide and Related Compounds 1987, ed. by. A. Christou and
H.S. Ruppert, (IOP Publishing Ltd, Bristol, 1988) p. 423.
W.M. Chen, M. Godlewski, B.
Monemar, and H.P. Gislason,
Optically detected magnetic resonance
studies of complex antisite-related defects in bulk LEC GaP, in
Defects in Electronic Materials, ed. by. M. Stavola, S.J. Pearton
and G. Davies, (Materials Research Society, Pittsburgh, 1988) p.
467.
W.M. Chen, M. Godlewski, B.
Monemar, and H.P. Gislason,
Optical detection of magnetic resonance
(ODMR) studies of the electronic structure of complex defects in
GaP, in Defects in Electronic Materials, ed. by M. Stavola, S.J.
Pearton and G. Davies, (Materials Research Society, Pittsburgh,
1988) p.443.
Hafliði P. Gíslason,
Microscopic Identification of Defect Complexes. (Invited paper) in
Semi-insulating III-V Materials, ed by G. Grossmann and L. Ledebo
(Adam Hilger, Bristol, 1988) p. 311.
M. Godlewski, W.M. Chen, B.
Monemar and H.P. Gislason,
PGa-Cu antisite related deep complex
defects in GaP studied with optically detected magnetic resonance,
in Semi-insulating III-V Materials, ed by G. Grossmann and L. Ledebo
(Adam Hilger, Bristol, 1988) p. 325
K. Ando, A. Katsui, G.D. Watkins
and H.P. Gislason,
Defect structure transformation on anion Frenkel
pair defects in InP Defect Control in Semiconductors. Edited by K.
Sumino, Elsevier Science Publishers B.V. (North Holland), 1990, p.
921.
Hafliði P. Gíslason,
Einar Ö. Sveinbjörnsson, B. Monemar og M. Linnarsson,
Photoluminescence study of GaAs diffused with Li, in Impurities,
Defects and Diffusion in Semiconductors: Bulk and Layered
Structures, Edited by D.J. Wolford, J. Bernholc and E.E. Haller,
Materials Research Society, Pittsburgh, 1990, p. 127.
H.P. Gíslason, H. Sun, F.
Rong, and G.D. Watkins,
Antisite defects in as-grown and
electron-irradiated InP, in Physics of Semiconductors, Vol. 3,
edited by E.M. Anastassakis and J.D. Joannopoulos (World Scientific,
Singapore 1990), p 666.
H.P. Gislason, B.H. Yang, E.
Janzén and B. Monemar.
Correlation between electrical
compensation and shifting photoluminescence bands in Li-diffused
GaAs, in Physics of Semiconductors. (World Scientific, Singapore
1993) p. 1621.
H.P. Gislason, B.H. Yang and M.
Linnarsson.
Properties of high-resistivity Li-diffused GaAs.
Semi-Insulating III-V Materials. Ed. C. Miner. (IOP publishing Ltd.
1993) p. 55.
B.H. Yang, T. Egilsson, and H.P.
Gislason, Semi-insulating GaAs:Cu. In Semi-insulating III-V
Materials, ed. M. Godlewski (World Scientific, Singapore 1994) p.
263
H.P. Gislason, T. Egilsson, and
B.H. Yang,
Passivation and reactivation of copper and zinc acceptors
by field drift of lithium in p-type GaAs. In The Physics of
Semiconductors, ed. D.J. Lockwood (World Scientific, Singapore 1995)
p. 2407.
E.Ö. Sveinbjörnsson, S.
Kristjánsson, O. Engström and H.P. Gislason,
Hydrogen
and lithium passivation of gold in silicon, a comparative study,
Mat. Res. Soc. Symp. Proc. 378 (1995) 371
H.P. Gislason and K. Leosson,
Passivation of shallow and deep impurities by hydrogen and light
metal ions, Proceedings of the 23rd International Conference on the
Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann
(World Scientific, Singapore 1996) p. 3013
D. Seghier and H.P. Gislason,
On deep levels in semi-insulating LEC-GaAs investigated by means of
photo induced current transient spectroscopy. Proc IEEE-SIMC9
meeting, Toulouse (1996). Ed. C. Fontaine, p. 145.
B.H. Yang, D. Seghier and H.P.
Gislason,
Compensation mechanism and transport behaviour of
semi-insulating GaAs:Cu. Proc IEEE-SIMC9 meeting, Toulouse (1996).
Ed. C. Fontaine, p. 166.
D. Seghier and H.P. Gislason,
Electrical characterization of nitrogen acceptors in p-ZnSe/p-GaAs
grown by molecular beam epitxy, in Defects in Electronic Materials
II, ed. J. Michel, T. Kennedy, K. Wada, and K. Thonke, p. 573 (1997)
K. Leosson and H.P. Gislason,
Evidence for non-correlation between the 0.15 eV and 0.44 eV
Cu-related acceptor levels in GaAs in Defects in Electronic
Materials II, ed. J. Michel, T. Kennedy, K. Wada, and K. Thonke, p.
453 (1997)
D. Seghier and H.P. Gislason,
Effects of Cu diffusion on electrical properties of GaAs, Proc 1998
IEEE-SIMC-X conference. Ed. Z. Lilienthal-Weber and C. Miner, p. 161
(1999)
D. Seghier and H.P. Gislason,
Persistent photoconductivity in nitrogen-doped p-type Zn(S)Se/GaAs,
Proc 1998 IEEE-SIMC-X conference. Ed. Z. Lilienthal-Weber and C.
Miner, p. 313 (1999)
D. Seghier and H.P. Gislason,
Electrical characterization of Mg-related energy levels and
compensation mechanism in Mg-doped GaN, Proc 1998 IEEE-SIMC-X
conference. Ed. Z. Lilienthal-Weber and C. Miner, p. 255 (1999)
D. Seghier and H.P. Gislason,
Observation of metastable states and their relation to the persistent
photocurrent in Mg-doped GaN, Proceedings of the 25th International
Conference on the Physics of Semiconductors, Eds. N. Miura and T. Ando, p.
1605 (2001).
J.T. Gudmundsson, H.G. Svavarsson, and H.P. Gislason,
Hopping conduction in lithium-diffused and annealed GaAs,
Proceedings of the IEEE-SIMC-XII-2002 conference, 9-12 (2002).
D. Seghier and H.P. Gislason,
Electrical Characterisation of hydrogenated n-type
AlGaN alloys grown by MOCVD.
Proceedings of the IEEE-SIMC-XII-2002 conference, 52-55(2002)
D. Seghier and H.P. Gislason,
Low-frequency
noise in AlGaN-based Schottky barriers.
Proceedings of the 27th International Conference on the Physics of
Semiconductors (Flagstaff 2004) pp. 433-434.
D. Seghier and H.P. Gislason,
Noise Measurements In Mg-doped GaN.
Proceedings of the 27th International Conference on the Physics of
Semiconductors (Flagstaff 2004) pp. 229-230.
D. Seghier and H.P. Gislason,
Noise processes and their
origin in Mg-doped GaN.
Proceedings of the
IEEE-SIMC-XIII conference, (Beijing 2004) pp. 226-229.
D. Seghier, T.M. Arinbjarnason, and H.P. Gislason,
Deep-Defect Related Generation-Recombination Noise in GaAs
Proceedings of the IEEE-SIMC-XIII conference, (Beijing 2004)
pp. 234-237.
D. Seghier and H.P. Gislason,
Noise spectroscopy on
defects with thermally activated capture in GaAs,
11th International Conference on Defects: Recognition, Imaging and Physics in
Semiconductors, Sept. 15-19, Beijing (2005).
Materials Science and Semiconductor Processing 9 (2006) 359-361.
D. Seghier and H.P. Gislason,
DX-like defects in AlGaN/GaN structures by means of
noise spectroscopy,
11th International Conference on Defects: Recognition, Imaging and Physics in
Semiconductors, Sept. 15-19, Beijing (2005).
Materials Science and Semiconductor Processing 9 (2006) 41-44.
| A 4.2 Bókakaflar - |
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| Articles in other conference proceedings |
H.P. Gislason, M.E. Pistol, and B. Monemar,
Properties of Gallium
Phosphide doped with Cu and Li,
in: Proceedings of the 10th Nordic
Semiconductor Meeting, Helsingör, B4:1 (1982).
H.P. Gislason, B. Monemar, and Z.G. Wang,
Acceptorlike and isoelectronic
complexes of Cu, Cu-Li and Cu-Zn in GaAs,
in: Proceedings of the 11th
Nordic Semiconductor Meeting, Espoo (1984).
H.P. Gislason,
Excitons bound to isoelectronic defect complexes in compound
semiconductors. Invited paper. Study Group of Solid State
Spectroscopy, Malmö, 1984, AS/Science/Spec (36) 1, p. 29.
W.M. Chen, B. Monemar, M. Godlewski, and H.P. Gislason,
Optical detection of magnetic resonance for studies of defects in
semiconductors, in Proc. 12th Nordic Semiconductor Meeting,
Jevnåker, Norway, (1986) p. 309.
H.P. Gislason,
Antisite defects in Indium Phosphide, invited paper, in Proc. 14th
Nordic Semiconductor Meeting 1990. Edited by Ole Hansen, Århus
1990, p. 64.
H.P. Gíslason and E.Ö, Sveinbjörnsson,
The role of native defects in the optical properties of Li-diffused
GaAs, in Proc. 14th Nordic Semiconductor Meeting 1990. Edited by Ole
Hansen, Århus 1990, p. 137.
H.P. Gislason, B.H. Yang and M. Linnarsson,
Semi-insulating Li-diffused GaAs, in Proc. 15th Nordic
Semiconductor Meeting. Ritstj. S. Franssila og R. Paananen. (VTT,
Espoo, 1992) p. 329.
J. Pétursson, B.H. Yang and H.P. Gislason,
Optical measurements on Li-diffused GaAs, in Proc. 15th
Nordic Semiconductor Meeting. Editors S. Franssila og R. Paananen.
(VTT, Espoo, 1992) p. 345.
T. Takahashi, K. Inoue, H.P. Gislason, S. Suzuki, K. Hara, H. Munekata,
and H. Kukimoto,
Thermal annealing of N-doped ZnSe layers with the application of an electric field,
14th Electronic Materials Symposium, July 1995, Izu-Nagaoka
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